RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Narihiko Maeda*, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where the regrown ohmic structure was incorporated to reduce the contact resistance. Excellent DC and RF characteristics have been obtained together with the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. An HFET with a gate length (L g) of 0.1 μm has exhibited a drain current density (I d) and a transconductance (g m) of 1.30 A/mm and 293 mS/mm, respectively, with a reduced contact resistance of 0.3 Ω mm. The gate leakage current (I g) was as low as 1 × 10 -8 A/mm in the reverse vias region, and only 4 × 10 -5 A/mm even at a forward bias voltage of +3 V. In this device, the cutoff frequency (f T) and maximum oscillation frequency (f max) were estimated to be 70 and 90 GHz, respectively. In the HFETs with longer L g of 0.7 and 1.0 μm,f T and f max were 20 and 48 GHz (L g = 0.7 μm), respectively; and 14 and 35 GHz (L g = 1.0 μm), respectively. Thus, the Al 2O 3/Si 3N 4 MIS HFETs have proved to also exhibit excellent RF characteristics.

本文言語English
ページ(範囲)1861-1865
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
203
7
DOI
出版ステータスPublished - 2006 5月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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