RF and DC characteristics in Al ₂O ₃/Si ₃N ₄ insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Engineering & Materials Science

• High electron mobility transistors 100%
• Contact resistance 49%
• Leakage currents 46%
• Semiconductor materials 38%
• Metals 27%
• Drain current 27%
• Bias voltage 27%
• Transconductance 25%
• Cutoff frequency 24%
• Current density 20%

Physics & Astronomy

• field effect transistors 67%
• direct current 67%
• MIS (semiconductors) 48%
• contact resistance 45%
• leakage 35%
• transconductance 23%
• cut-off 18%
• current density 15%
• oscillations 13%
• electric potential 11%

Chemical Compounds

• Field Effect 85%
• Leakage Current 56%
• Contact Resistance 54%
• Length 51%
• Drain Current 33%
• Transconductance 33%
• Current Density 15%
• Voltage 15%