RF diamond MISFETs using surface accumulation layer

K. Hirama*, T. Koshiba, K. Yohara, H. Takayanagi, S. Yamauchi, M. Satoh, H. Kawarada

*この研究の対応する著者

研究成果

5 被引用数 (Scopus)

抄録

Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 μm gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz.

本文言語English
ホスト出版物のタイトルProceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
出版ステータスPublished - 2006 12 1
イベント18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples, Italy
継続期間: 2006 6 42006 6 8

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2006
ISSN(印刷版)1063-6854

Conference

Conference18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
国/地域Italy
CityNaples
Period06/6/406/6/8

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「RF diamond MISFETs using surface accumulation layer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル