RF diamond transistors: Current status and future prospects

Hitoshi Umezawa*, Kazuyuki Hirama, Tatsuya Arai, Hideo Hata, Hidenori Takayanagi, Toru Koshiba, Keiichiro Yohara, Soichi Mejima, Mitsuya Satoh, Kwang Soup Song, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

本文言語English
ページ(範囲)7789-7794
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
11
DOI
出版ステータスPublished - 2005 11月 9

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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