RF Equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination

Makoto Kasu*, Kenji Ueda, Hiroyuki Kageshima, Yoshiharu Yamauch

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fmax cut-off frequencies near the threshold gate voltage, and (3) a high fmaxft ratio∼3.8. We discuss these features in terms of the energy barrier between the gate metal and the two-dimensional hole channel and drift region below the gate.

本文言語English
ページ(範囲)1042-1049
ページ数8
ジャーナルIEICE Transactions on Electronics
E91-C
7
DOI
出版ステータスPublished - 2008 7月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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