RF performance of diamond metel-semiconductor field-effect transistor at elevated temperatures and analysis of its equivalent circuit

Haitao Ye*, Makoto Kasu, Kenji Ueda, Yoshiharu Yamauchi, Narihiko Maeda, Satoshi Sasaki, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Temperature dependent DC and RF characteristics of p-type diamond metal-semiconductor field-effect transistors (MESFETs) on hydrogen-terminated surfaces are investigated. The device is thermally stable up to 100°C, because it does not deteriorate at all at higher temperatures. Temperature coefficients of transconductance (gm), drain conductance (g ds). gate-source capacitance (Cgs), gate-drain capacitance (Cgd), cut-off frequency (fT), and maximum drain current (Ids) were obtained from small-signal equivalent circuit analysis. The cut-off frequency (fT) is almost totally independent of temperature. Intrinsic gm, gds, and Cgs decrease with increasing temperature. Cgd is almost totally independent of temperature. The threshold voltage shifts to the negative side with increasing temperature. We propose a band model of an Al-gate contact/ H-terminated diamond to explain the temperature dependence of these components.

本文言語English
ページ(範囲)3609-3613
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
4 B
DOI
出版ステータスPublished - 2006 4月 25
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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