RF performance of diamond MISFETs

Hitoshi Umezawa, Hirotada Taniuchi, Hiroaki Ishizaka, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

研究成果: Article

21 引用 (Scopus)

抜粋

A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

元の言語English
ページ(範囲)121-123
ページ数3
ジャーナルIEEE Electron Device Letters
23
発行部数3
DOI
出版物ステータスPublished - 2002 3 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • これを引用

    Umezawa, H., Taniuchi, H., Ishizaka, H., Arima, T., Fujihara, N., Tachiki, M., & Kawarada, H. (2002). RF performance of diamond MISFETs. IEEE Electron Device Letters, 23(3), 121-123. https://doi.org/10.1109/55.988811