RF performance of diamond MISFETs

Hitoshi Umezawa, Hirotada Taniuchi, Hiroaki Ishizaka, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

    研究成果: Article

    21 引用 (Scopus)

    抄録

    A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

    元の言語English
    ページ(範囲)121-123
    ページ数3
    ジャーナルIEEE Electron Device Letters
    23
    発行部数3
    DOI
    出版物ステータスPublished - 2002 3

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    Diamond
    Diamonds
    MISFET devices
    Field effect transistors
    Capacitance
    Management information systems
    Scattering parameters
    Cutoff frequency
    Equivalent circuits
    Hydrogen
    Metals
    Semiconductor materials

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    これを引用

    Umezawa, H., Taniuchi, H., Ishizaka, H., Arima, T., Fujihara, N., Tachiki, M., & Kawarada, H. (2002). RF performance of diamond MISFETs. IEEE Electron Device Letters, 23(3), 121-123. https://doi.org/10.1109/55.988811

    RF performance of diamond MISFETs. / Umezawa, Hitoshi; Taniuchi, Hirotada; Ishizaka, Hiroaki; Arima, Takuya; Fujihara, Naoki; Tachiki, Minoru; Kawarada, Hiroshi.

    :: IEEE Electron Device Letters, 巻 23, 番号 3, 03.2002, p. 121-123.

    研究成果: Article

    Umezawa, H, Taniuchi, H, Ishizaka, H, Arima, T, Fujihara, N, Tachiki, M & Kawarada, H 2002, 'RF performance of diamond MISFETs', IEEE Electron Device Letters, 巻. 23, 番号 3, pp. 121-123. https://doi.org/10.1109/55.988811
    Umezawa H, Taniuchi H, Ishizaka H, Arima T, Fujihara N, Tachiki M その他. RF performance of diamond MISFETs. IEEE Electron Device Letters. 2002 3;23(3):121-123. https://doi.org/10.1109/55.988811
    Umezawa, Hitoshi ; Taniuchi, Hirotada ; Ishizaka, Hiroaki ; Arima, Takuya ; Fujihara, Naoki ; Tachiki, Minoru ; Kawarada, Hiroshi. / RF performance of diamond MISFETs. :: IEEE Electron Device Letters. 2002 ; 巻 23, 番号 3. pp. 121-123.
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    abstract = "A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.",
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    AU - Tachiki, Minoru

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