RF performance of diamond MISFETs

Hitoshi Umezawa; Hirotada Taniuchi; Hiroaki Ishizaka; Takuya Arima; Naoki Fujihara; Minoru Tachiki; Hiroshi Kawarada

doi:10.1109/55.988811

RF performance of diamond MISFETs

Hitoshi Umezawa^*, Hirotada Taniuchi, Hiroaki Ishizaka, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

22 被引用数 (Scopus)

抄録

A cutoff frequency (f_T) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF₂ as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest f_max of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

本文言語	English
ページ（範囲）	121-123
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	23
号	3
DOI	https://doi.org/10.1109/55.988811
出版ステータス	Published - 2002 3月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "RF performance of diamond MISFETs",

abstract = "A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.",

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author = "Hitoshi Umezawa and Hirotada Taniuchi and Hiroaki Ishizaka and Takuya Arima and Naoki Fujihara and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: Manuscript received September 27, 2001. This work was supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology and by the Advanced Research Institute for Science and Engineering, Waseda University. The review of this letter was arranged by Editor S. Kawamura.",

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AU - Umezawa, Hitoshi

AU - Taniuchi, Hirotada

AU - Ishizaka, Hiroaki

AU - Arima, Takuya

AU - Fujihara, Naoki

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received September 27, 2001. This work was supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology and by the Advanced Research Institute for Science and Engineering, Waseda University. The review of this letter was arranged by Editor S. Kawamura.

PY - 2002/3

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N2 - A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

AB - A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

KW - CaF

KW - Cutoff frequency

KW - Diamond

KW - Gate-source capacitance

KW - Hydrogen-terminated surface

KW - Metal-insulator-semiconductor field-effect transistor (MISFET)

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RF performance of diamond MISFETs

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