RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa, Shingo Miyamoto, Hiroki Matsudaira, Hiroaki Ishizaka, Kwang Soup Song, Minoru Tachiki, Hiroshi Kawarada

研究成果: Article

1 引用 (Scopus)

抜粋

RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

元の言語English
ページ(範囲)1949-1954
ページ数6
ジャーナルIEICE Transactions on Electronics
E86-C
発行部数10
出版物ステータスPublished - 2003 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • これを引用

    Umezawa, H., Miyamoto, S., Matsudaira, H., Ishizaka, H., Song, K. S., Tachiki, M., & Kawarada, H. (2003). RF Performance of Diamond Surface-Channel Field-Effect Transistors. IEICE Transactions on Electronics, E86-C(10), 1949-1954.