RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa, Shingo Miyamoto, Hiroki Matsudaira, Hiroaki Ishizaka, Kwang Soup Song, Minoru Tachiki, Hiroshi Kawarada

    研究成果: Article

    1 引用 (Scopus)

    抄録

    RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

    元の言語English
    ページ(範囲)1949-1954
    ページ数6
    ジャーナルIEICE Transactions on Electronics
    E86-C
    発行部数10
    出版物ステータスPublished - 2003 10

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    Diamond
    Field effect transistors
    Diamonds
    Transconductance
    Hydrogen
    Fabrication

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    これを引用

    Umezawa, H., Miyamoto, S., Matsudaira, H., Ishizaka, H., Song, K. S., Tachiki, M., & Kawarada, H. (2003). RF Performance of Diamond Surface-Channel Field-Effect Transistors. IEICE Transactions on Electronics, E86-C(10), 1949-1954.

    RF Performance of Diamond Surface-Channel Field-Effect Transistors. / Umezawa, Hitoshi; Miyamoto, Shingo; Matsudaira, Hiroki; Ishizaka, Hiroaki; Song, Kwang Soup; Tachiki, Minoru; Kawarada, Hiroshi.

    :: IEICE Transactions on Electronics, 巻 E86-C, 番号 10, 10.2003, p. 1949-1954.

    研究成果: Article

    Umezawa, H, Miyamoto, S, Matsudaira, H, Ishizaka, H, Song, KS, Tachiki, M & Kawarada, H 2003, 'RF Performance of Diamond Surface-Channel Field-Effect Transistors', IEICE Transactions on Electronics, 巻. E86-C, 番号 10, pp. 1949-1954.
    Umezawa H, Miyamoto S, Matsudaira H, Ishizaka H, Song KS, Tachiki M その他. RF Performance of Diamond Surface-Channel Field-Effect Transistors. IEICE Transactions on Electronics. 2003 10;E86-C(10):1949-1954.
    Umezawa, Hitoshi ; Miyamoto, Shingo ; Matsudaira, Hiroki ; Ishizaka, Hiroaki ; Song, Kwang Soup ; Tachiki, Minoru ; Kawarada, Hiroshi. / RF Performance of Diamond Surface-Channel Field-Effect Transistors. :: IEICE Transactions on Electronics. 2003 ; 巻 E86-C, 番号 10. pp. 1949-1954.
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    abstract = "RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.",
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    AU - Miyamoto, Shingo

    AU - Matsudaira, Hiroki

    AU - Ishizaka, Hiroaki

    AU - Song, Kwang Soup

    AU - Tachiki, Minoru

    AU - Kawarada, Hiroshi

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    KW - Cut-off frequency

    KW - Diamond

    KW - Hydrogen-terminated surface channel

    KW - MESFET

    KW - MISFET

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