RF response of PIN photodiode with avalanche multiplication using quantum dots

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

研究成果: Conference contribution

抄録

We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.

本文言語English
ホスト出版物のタイトル2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOI
出版ステータスPublished - 2013 10 18
外部発表はい
イベント10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
継続期間: 2013 6 302013 7 4

出版物シリーズ

名前Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period13/6/3013/7/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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