Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata*, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

*この研究の対応する著者

研究成果: Conference contribution

47 被引用数 (Scopus)

抄録

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

本文言語English
ホスト出版物のタイトル2008 IEEE International Interconnect Technology Conference, IITC
ページ237-239
ページ数3
DOI
出版ステータスPublished - 2008 9 9
イベント2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States
継続期間: 2008 6 12008 6 4

出版物シリーズ

名前2008 IEEE International Interconnect Technology Conference, IITC

Conference

Conference2008 IEEE International Interconnect Technology Conference, IITC
国/地域United States
CityBurlingame, CA
Period08/6/108/6/4

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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