Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

研究成果: Conference article査読

6 被引用数 (Scopus)

抄録

Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

本文言語English
ページ(範囲)281-289
ページ数9
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
1128
DOI
出版ステータスPublished - 1989 12 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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