Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii, Daisuke Isshiki, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

    研究成果: Chapter

    15 引用 (Scopus)

    抄録

    The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.

    元の言語English
    ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    出版場所Minato-ku, Japan
    出版者JJAP
    ページ205-211
    ページ数7
    34
    エディション1
    出版物ステータスPublished - 1995 1

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    Point defects
    Oxygen vacancies
    Plasma enhanced chemical vapor deposition
    Electric breakdown
    Luminescence
    Polymers
    Synchrotron radiation
    Light absorption
    Impurities
    Thin films
    Temperature
    Oxygen
    Electric potential

    ASJC Scopus subject areas

    • Engineering(all)

    これを引用

    Ishii, K., Isshiki, D., Ohki, Y., Nishikawa, H., & Takiyama, M. (1995). Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (1 版, 巻 34, pp. 205-211). Minato-ku, Japan: JJAP.

    Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Isshiki, Daisuke; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 巻 34 1. 編 Minato-ku, Japan : JJAP, 1995. p. 205-211.

    研究成果: Chapter

    Ishii, K, Isshiki, D, Ohki, Y, Nishikawa, H & Takiyama, M 1995, Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1 Edn, 巻. 34, JJAP, Minato-ku, Japan, pp. 205-211.
    Ishii K, Isshiki D, Ohki Y, Nishikawa H, Takiyama M. Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1 版 巻 34. Minato-ku, Japan: JJAP. 1995. p. 205-211
    Ishii, Keisuke ; Isshiki, Daisuke ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Takiyama, Makoto. / Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 巻 34 1. 版 Minato-ku, Japan : JJAP, 1995. pp. 205-211
    @inbook{e5901b2de0014f5cb9dc3dcb89f0b89c,
    title = "Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane",
    abstract = "The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.",
    author = "Keisuke Ishii and Daisuke Isshiki and Yoshimichi Ohki and Hiroyuki Nishikawa and Makoto Takiyama",
    year = "1995",
    month = "1",
    language = "English",
    volume = "34",
    pages = "205--211",
    booktitle = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers",
    publisher = "JJAP",
    edition = "1",

    }

    TY - CHAP

    T1 - Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

    AU - Ishii, Keisuke

    AU - Isshiki, Daisuke

    AU - Ohki, Yoshimichi

    AU - Nishikawa, Hiroyuki

    AU - Takiyama, Makoto

    PY - 1995/1

    Y1 - 1995/1

    N2 - The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.

    AB - The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.

    UR - http://www.scopus.com/inward/record.url?scp=0029207927&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0029207927&partnerID=8YFLogxK

    M3 - Chapter

    VL - 34

    SP - 205

    EP - 211

    BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

    PB - JJAP

    CY - Minato-ku, Japan

    ER -