Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The I_d-V_g characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni_0.36Nb_0.24Zr_0.40)₉₀H₁₀ FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.