Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

研究成果: Article査読

68 被引用数 (Scopus)

抄録

Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

本文言語English
ページ(範囲)1999-2001
ページ数3
ジャーナルApplied Physics Letters
60
16
DOI
出版ステータスPublished - 1992 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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