抄録
Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.
本文言語 | English |
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ページ(範囲) | 1999-2001 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 60 |
号 | 16 |
DOI | |
出版ステータス | Published - 1992 12月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)