Room Temperature Bonding of Quartz Glass using Aluminum Oxide Intermediate Layer

Kai Takeuchi, Fengwen Mu, Yoshiie Matsumoto, Tadatomo Suga

研究成果: Conference contribution

抄録

This paper presents a new room temperature bonding methodology of glass using aluminum oxide (AlO) intermediate layer. Conventional glass to glass direct bonding approaches such as anodic bonding and surface activated bonding (SAB) using silicon intermediate layer have several drawbacks such as high process temperature and a deterioration of the optical property of glass induced by the intermediate layer. In this work, based on the SAB method, quartz wafers are bonded via AlO layer formed by ion beam sputtering is proposed. The bonded quartz wafers have the bond strength of 1.8 J/m and a transparent interface.

本文言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版ステータスPublished - 2019 5
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
国/地域Japan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • プロセス化学およびプロセス工学
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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