ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.

S. Akiba, K. Sakai, Yuichi Matsushima, T. Yamamoto

研究成果: Article

41 引用 (Scopus)

抜粋

Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.

元の言語English
ページ(範囲)606-607
ページ数2
ジャーナルElectronics Letters
15
発行部数19
出版物ステータスPublished - 1979 1 1
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Akiba, S., Sakai, K., Matsushima, Y., & Yamamoto, T. (1979). ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m. Electronics Letters, 15(19), 606-607.