Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.
|出版ステータス||Published - 1979 1 1|
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