抄録
Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 961-963 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 17 |
| DOI | |
| 出版ステータス | Published - 1981 12月 10 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学