抜粋
Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 961-963 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 17 |
| DOI | |
| 出版物ステータス | Published - 1981 12 10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
フィンガープリント Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Utaka, K., Akiba, S., Sakai, K., & Matsushima, Y. (1981). Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm. Electronics Letters, 17, 961-963. https://doi.org/10.1049/el:19810672