抄録
We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1271-1273 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 23 |
| 号 | 24 |
| DOI | |
| 出版ステータス | Published - 1987 1 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学