抜粋
We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1271-1273 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 23 |
| 発行部数 | 24 |
| DOI | |
| 出版物ステータス | Published - 1987 1 1 |
フィンガープリント
ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Matsushima, Y., Utaka, K., Sakai, K., Takeuchi, O., & Takeuchi, O. (1987). Room-Temperature CW Operation of Mbe-Grown Galnas/AllnAs Mow Lasers IN 1.5 μm Range. Electronics Letters, 23(24), 1271-1273. https://doi.org/10.1049/el:19870882