抄録
We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.
本文言語 | English |
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ページ(範囲) | 1271-1273 |
ページ数 | 3 |
ジャーナル | Electronics Letters |
巻 | 23 |
号 | 24 |
DOI | |
出版ステータス | Published - 1987 1 1 |
外部発表 | はい |
ASJC Scopus subject areas
- Electrical and Electronic Engineering