Room temperature GaN bonding by surface activated bonding methods

Fengwen Mu, Tadatomo Suga

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this work, both GaN-Si and GaN-diamond bonding at room temperature were achieved by surface activated bonding (SAB) methods. In the GaN-Si bonding by standard SAB, the results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy. Both of the structure and composition of the two kinds of GaN-Si interfaces were investigated to understand the bonding mechanisms. In the GaN-diamond bonding by modified SAB using an intermediate Si nano-layer, a uniformly seamless bonding interface was achieved. The GaN-diamond bonded structure is expected to be helpful for the applications of high-power GaN devices.

本文言語English
ホスト出版物のタイトルProceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
編集者Fei Xiao, Jun Wang, Lin Chen, Tianchun Ye
出版社Institute of Electrical and Electronics Engineers Inc.
ページ521-524
ページ数4
ISBN(電子版)9781538663868
DOI
出版ステータスPublished - 2018 10 2
外部発表はい
イベント19th International Conference on Electronic Packaging Technology, ICEPT 2018 - Shanghai, China
継続期間: 2018 8 82018 8 11

出版物シリーズ

名前Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018

Conference

Conference19th International Conference on Electronic Packaging Technology, ICEPT 2018
国/地域China
CityShanghai
Period18/8/818/8/11

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 機械工学
  • 材料力学
  • セラミックおよび複合材料
  • 電子材料、光学材料、および磁性材料
  • 金属および合金
  • ポリマーおよびプラスチック

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