Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.
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