Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Fengwen Mu, Ran He, Tadatomo Suga

研究成果: Article査読

40 被引用数 (Scopus)

抄録

Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.

本文言語English
ページ(範囲)148-151
ページ数4
ジャーナルScripta Materialia
150
DOI
出版ステータスPublished - 2018 6 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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