抄録
We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one in 100-1000) of the clusters shows random telegraph noise in luminescence at room temperature. Superlinear dependence of the luminescence switching rate on excitation intensity indicates that the switching is induced by the cooperation of multiple carriers.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1065-1067 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 78 |
| 号 | 8 |
| DOI | |
| 出版ステータス | Published - 2001 2月 19 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）