Room temperature SiC-SiC direct wafer bonding by SAB methods

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Tadatomo Suga

研究成果: Conference contribution

抄録

Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

本文言語English
ホスト出版物のタイトルProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743034
DOI
出版ステータスPublished - 2017 6 13
外部発表はい
イベント5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
継続期間: 2017 5 162017 5 18

出版物シリーズ

名前Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
国/地域Japan
CityTokyo
Period17/5/1617/5/18

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料
  • 表面、皮膜および薄膜

フィンガープリント

「Room temperature SiC-SiC direct wafer bonding by SAB methods」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル