Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate si nano layer

Fengwen Mu, K. Iguchi, H. Nakazawa, Y. Takahashi, R. He, M. Fujino, T. Suga

研究成果: Article

2 引用 (Scopus)

抄録

In this work, compared with the direct wafer bonding by surface activated bonding (SAB) at room temperature, SiC-SiO2 wafer bonding was effectively enhanced by using a Si nano layer deposited on SiO2 such as improvement of fracture surface energy and reduction of bonding void. A uniform seamless bonding in bonded region was confirmed by interface analysis. The strong bonding confirmed the strong bonding of SiC-Si in previous research and also demonstrated a strong adhesion of Si nano layer deposited on SiO2 substrate, which is different from direct wafer bonding of Si-SiO2 by SAB. The possible mechanism of strong adhesion was investigated by molecular dynamic simulation.

元の言語English
ページ(範囲)P227-P230
ジャーナルECS Journal of Solid State Science and Technology
6
発行部数5
DOI
出版物ステータスPublished - 2017 1 1
外部発表Yes

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Wafer bonding
Temperature
Adhesion
Interfacial energy
Molecular dynamics
Computer simulation
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate si nano layer. / Mu, Fengwen; Iguchi, K.; Nakazawa, H.; Takahashi, Y.; He, R.; Fujino, M.; Suga, T.

:: ECS Journal of Solid State Science and Technology, 巻 6, 番号 5, 01.01.2017, p. P227-P230.

研究成果: Article

Mu, Fengwen ; Iguchi, K. ; Nakazawa, H. ; Takahashi, Y. ; He, R. ; Fujino, M. ; Suga, T. / Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate si nano layer. :: ECS Journal of Solid State Science and Technology. 2017 ; 巻 6, 番号 5. pp. P227-P230.
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AU - Fujino, M.

AU - Suga, T.

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