Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate si nano layer

Fengwen Mu, K. Iguchi, H. Nakazawa, Y. Takahashi, R. He, M. Fujino, T. Suga

研究成果: Article査読

8 被引用数 (Scopus)

抄録

In this work, compared with the direct wafer bonding by surface activated bonding (SAB) at room temperature, SiC-SiO2 wafer bonding was effectively enhanced by using a Si nano layer deposited on SiO2 such as improvement of fracture surface energy and reduction of bonding void. A uniform seamless bonding in bonded region was confirmed by interface analysis. The strong bonding confirmed the strong bonding of SiC-Si in previous research and also demonstrated a strong adhesion of Si nano layer deposited on SiO2 substrate, which is different from direct wafer bonding of Si-SiO2 by SAB. The possible mechanism of strong adhesion was investigated by molecular dynamic simulation.

本文言語English
ページ(範囲)P227-P230
ジャーナルECS Journal of Solid State Science and Technology
6
5
DOI
出版ステータスPublished - 2017 1月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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