Room temperature SiC wafer bonding using SAB methods

Fengwen Mu, Yinghui Wang, Kenichi Iguchi, Haruo Nakazawa, Tadatomo Suga

研究成果: Conference contribution

抄録

In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.

本文言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版ステータスPublished - 2019 5
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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