Room-temperature transfer bonding of lithium niobate thin film on micromachined silicon substrate with Au microbumps

Ryo Takigawa*, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi

*この研究の対応する著者

研究成果: Article査読

18 被引用数 (Scopus)

抄録

This paper introduces a room-temperature transfer bonding method for a future integration of LiNbO3 thin-film device with a micromachined Si platform. A single-crystal LiNbO3 thin film (5 μm thickness) prepared by mechanical polishing was successfully transfer-bonded onto a micromachined Si substrate with Au microbumps in ambient air using surface activated bonding. Tensile testing showed the strong bond strength between the Au thin film and the Au microbumps, which was sufficient for device applications. An air/LiNbO3 thin film/air structure was demonstrated on a Si substrate using the proposed method. In addition, our simulation and experimental results showed that room-temperature bonding was essential to overcome the large coefficient of thermal expansion mismatch between LiNbO3 and Si. We expect that this technology can be utilized to realize new configurations of highly-functional integrated microelectromechanical systems, including Si-based high-density integrated photonic devices.

本文言語English
ページ(範囲)274-281
ページ数8
ジャーナルSensors and Actuators, A: Physical
264
DOI
出版ステータスPublished - 2017 9月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学

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