抄録
A modified surface activated bonding (SAB) with Fe-Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects device performance, cannot be avoided during some annealing processes. In this work, the room-temperature wafer bonding of SiC-Si by only one sputtered Si nanolayer was successfully achieved. The bonding interface was investigated. A uniform intermediate layer with a thickness of ∼ 15nm just containing Si, C, and Ar was found at the interface. The bonding strength between the SiC surface and the sputtered Si nanolayer could reach the bulk Si strength in accordance with the results of the strength test. This indicates that the wafer bonding of SiC to any other materials can be achieved easily if the material could be also strongly bonded to the sputtered Si nanolayer. In addition, the thermal and chemical reliabilities of the SiC-Si bonding interface were investigated by rapid thermal annealing and KOH etching, respectively.
| 元の言語 | English |
|---|---|
| 記事番号 | 04EC09 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 55 |
| 発行部数 | 4 |
| DOI | |
| 出版物ステータス | Published - 2016 4 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Room-temperature wafer bonding of SiC-Si by modified surface activated bonding with sputtered Si nanolayer. / Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu; Fujino, Masahisa; Suga, Tadatomo.
：: Japanese journal of applied physics, 巻 55, 番号 4, 04EC09, 01.04.2016.研究成果: Article
}
TY - JOUR
T1 - Room-temperature wafer bonding of SiC-Si by modified surface activated bonding with sputtered Si nanolayer
AU - Mu, Fengwen
AU - Iguchi, Kenichi
AU - Nakazawa, Haruo
AU - Takahashi, Yoshikazu
AU - Fujino, Masahisa
AU - Suga, Tadatomo
PY - 2016/4/1
Y1 - 2016/4/1
N2 - A modified surface activated bonding (SAB) with Fe-Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects device performance, cannot be avoided during some annealing processes. In this work, the room-temperature wafer bonding of SiC-Si by only one sputtered Si nanolayer was successfully achieved. The bonding interface was investigated. A uniform intermediate layer with a thickness of ∼ 15nm just containing Si, C, and Ar was found at the interface. The bonding strength between the SiC surface and the sputtered Si nanolayer could reach the bulk Si strength in accordance with the results of the strength test. This indicates that the wafer bonding of SiC to any other materials can be achieved easily if the material could be also strongly bonded to the sputtered Si nanolayer. In addition, the thermal and chemical reliabilities of the SiC-Si bonding interface were investigated by rapid thermal annealing and KOH etching, respectively.
AB - A modified surface activated bonding (SAB) with Fe-Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects device performance, cannot be avoided during some annealing processes. In this work, the room-temperature wafer bonding of SiC-Si by only one sputtered Si nanolayer was successfully achieved. The bonding interface was investigated. A uniform intermediate layer with a thickness of ∼ 15nm just containing Si, C, and Ar was found at the interface. The bonding strength between the SiC surface and the sputtered Si nanolayer could reach the bulk Si strength in accordance with the results of the strength test. This indicates that the wafer bonding of SiC to any other materials can be achieved easily if the material could be also strongly bonded to the sputtered Si nanolayer. In addition, the thermal and chemical reliabilities of the SiC-Si bonding interface were investigated by rapid thermal annealing and KOH etching, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84963690574&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963690574&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.04EC09
DO - 10.7567/JJAP.55.04EC09
M3 - Article
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04EC09
ER -