Room temperature wafer bonding of wide bandgap semiconductors

Fengwen Mu, Yinghui Wang, Tadatomo Suga

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this work, wafer bonding of wide bandgap semiconductors of SiC and OaN were accomplished by different surface activated bonding (SAB) methods at room temperature. For SiC wafer bonding, room temperature SiC-SiC, SiC-Si and SiC-SiO 2 bonding by three kinds of SAB methods (standard SAB, Modified SAB with Si-containing Ar-beam, and Modified SAB with Si-sputtering layer) have been investigated and compared. For GaN wafer bonding, standard SAB was applied to the direct wafer bonding of GaN-Si at room temperature and modified SAB with Si-sputtering layer was employed for the bonding of GaN-diamond at room temperature. For both of the SiC bonding and GaN bonding, the bonding mechanisms were analyzed. The results of this research indicate SAB should be a promising method for the low temperature bonding of wide bandgap semiconductors.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者M. Goorsky, K.D. Hobart, F. Fournel, R. Knechtel, C.S. Tan, H. Baumgart, T. Suga
出版社Electrochemical Society Inc.
ページ3-21
ページ数19
5
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2018 1 1
外部発表はい
イベントSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9 302018 10 4

出版物シリーズ

名前ECS Transactions
番号5
86
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Conference

ConferenceSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
国/地域Mexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • 工学(全般)

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