Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Taishi Takenobu, Naoya Komatsu, Yusuke Suto, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi, Katsumi Tanigaki

研究成果: Conference contribution

抄録

High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
ページ270-275
ページ数6
965
出版ステータスPublished - 2006
外部発表はい
イベント2006 MRS Fall Meeting - Boston, MA
継続期間: 2006 11 272006 12 1

Other

Other2006 MRS Fall Meeting
CityBoston, MA
Period06/11/2706/12/1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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