Scaling guideline of DRAM memory cells for maintaining the retention time

Shuichi Ueno, Yasuo Inoue, Masahide Inuishi

研究成果: Conference article

9 引用 (Scopus)

抜粋

We propose the model of junction leakage current of local cells. Our model can well explain voltage, temperature dependence and distribution of the leakage current. This model indicates that interface state is considered to control the leakage current and retention time. Based on our model, we found that decreasing the trap density and the electric field are effective for decreasing the leakage current. Moreover, a guideline of trap density, storage capacitance and electric field is proposed for designing future DRAMs to maintain the retention time.

元の言語English
ページ(範囲)84-85
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版物ステータスPublished - 2000 1 1
外部発表Yes
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6 132000 6 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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