Scaling law in ULSI contamination control

Atsushi Hiraiwa*, Toshihiko Itoga

*この研究の対応する著者

研究成果: Article査読

16 被引用数 (Scopus)

抄録

The need for chemical contamination control for future LSI's is investigated by considering device failure mechanisms. The allowable contamination density is calculated by deducing relationships between the contamination density and resultant defect density from experimental results. In the calculations LSI failures are classified into two groups according to the characteristics of failure-producing defects: macrotype and microtype. The former defects are macroscopic and fatal: a single defect causes a failure. A stricter contamination control is required for smaller devices similar to that predicted by conventional yield theory. This is due to increasing chip area. By contrast the latter defects are of atomic size, and a single defect is not fatal: devices fail when the defect density exceeds some threshold value. Transconductance degradation in MOS transistors due to interface traps and the resultant SRAM operation error is proposed as an example. The threshold defect (or contamination) density for the failure could be 1 × 1011 cm-2 in this model. The allowable contamination density abruptly decreases for a minimum pattern size smaller than 0.1 μm. This is due to increasing fluctuations of defect density in component devices. This failure might cause a bottleneck in developing gigabit memories.

本文言語English
ページ(範囲)60-67
ページ数8
ジャーナルIEEE Transactions on Semiconductor Manufacturing
7
1
DOI
出版ステータスPublished - 1994 2
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料
  • 物理学および天文学(その他)
  • 凝縮系物理学

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