TY - JOUR
T1 - Scanning tunneling microscope(STM) for an advanced device processes
AU - Hosaka, Sumio
AU - Hosoki, Shigeyuki
AU - Hasegawa, Tsuyoshi
AU - Takata, Keiji
N1 - Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 1989
Y1 - 1989
N2 - A scanning tunneling microscope (STM) was developed to evaluate advanced device process which needs atomic or nm order control. The STM has an atomic resolution topographic imaging mode, a fast probe scanning and imaging mode, and a material characterization imaging mode. The features of the instrument are : (1) A conversion technology of tunneling current fluctuation to gap fluctuation for a high resolution STM image, (2) a correction technology of probe control error in fast scanning for an in-situ observation and (3) an AD-DA conversion technology to hold the probe position fixed for a Current Imaging Tunneling Spectroscopy (CITS). Various STM images support that the STM provides a high resolution (around 2 Å in X and Y, and less than 0.1 Å in Z), a fast imaging of 2 s/flame (150 Å × 150 Å) and simultaneous measurement of both STM image and current image. (7×7) reconstruction Si (111) surface VTR images, (√3 × √3) Au construction on Si (111), pn junction structure and the boundary, and groove shape and recorded pit structure in optical disc device are presented and discussed here. The STM is found to be feasible to evaluate an Molecular Beam Epitaxy (MBE) process, a fine pn junction and an ultra high packed structure.
AB - A scanning tunneling microscope (STM) was developed to evaluate advanced device process which needs atomic or nm order control. The STM has an atomic resolution topographic imaging mode, a fast probe scanning and imaging mode, and a material characterization imaging mode. The features of the instrument are : (1) A conversion technology of tunneling current fluctuation to gap fluctuation for a high resolution STM image, (2) a correction technology of probe control error in fast scanning for an in-situ observation and (3) an AD-DA conversion technology to hold the probe position fixed for a Current Imaging Tunneling Spectroscopy (CITS). Various STM images support that the STM provides a high resolution (around 2 Å in X and Y, and less than 0.1 Å in Z), a fast imaging of 2 s/flame (150 Å × 150 Å) and simultaneous measurement of both STM image and current image. (7×7) reconstruction Si (111) surface VTR images, (√3 × √3) Au construction on Si (111), pn junction structure and the boundary, and groove shape and recorded pit structure in optical disc device are presented and discussed here. The STM is found to be feasible to evaluate an Molecular Beam Epitaxy (MBE) process, a fine pn junction and an ultra high packed structure.
UR - http://www.scopus.com/inward/record.url?scp=85007767766&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85007767766&partnerID=8YFLogxK
U2 - 10.3131/jvsj.32.608
DO - 10.3131/jvsj.32.608
M3 - Article
AN - SCOPUS:85007767766
SN - 0559-8516
VL - 32
SP - 608
EP - 615
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
IS - 7
ER -