TY - JOUR
T1 - Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
AU - Tsugawa, K.
AU - Noda, H.
AU - Hirose, K.
AU - Kawarada, H.
PY - 2010/1/8
Y1 - 2010/1/8
N2 - Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.
AB - Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.
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U2 - 10.1103/PhysRevB.81.045303
DO - 10.1103/PhysRevB.81.045303
M3 - Article
AN - SCOPUS:77954830717
VL - 81
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 4
M1 - 045303
ER -