Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond

K. Tsugawa*, H. Noda, K. Hirose, H. Kawarada

*この研究の対応する著者

研究成果査読

29 被引用数 (Scopus)

抄録

Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.

本文言語English
論文番号045303
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
4
DOI
出版ステータスPublished - 2010 1 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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