TY - JOUR
T1 - Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes
AU - Makimoto, T.
AU - Kashiwa, M.
AU - Kido, T.
AU - Matsumoto, N.
AU - Kumakura, K.
AU - Kobayashi, N.
PY - 2003
Y1 - 2003
N2 - We investigated the Schottky characteristics of Au, Pd and Ni on n-GaN using capacitance-voltage and current-voltage measurements for mesa-structure diodes. Even though these metals have a similar metal work function of around 5.1 eV, their Schottky barrier heights are considerably different each other. The obtained Schottky barrier heights are 0.96, 1.50 and 1.34 eV for Au, Pd and Ni, respectively. The high Schottky barrier height for Pd is preferable for the gate metal in a field effect transistor and the ohmic metal for p-type nitride semiconductor. Although the work function difference between Au and Pd is just 0.02 eV, the barrier height difference is as high as 0.54 eV, meaning that the interfacial reaction between these metals and GaN or the Fermi-level pinning mechanism is quite different.
AB - We investigated the Schottky characteristics of Au, Pd and Ni on n-GaN using capacitance-voltage and current-voltage measurements for mesa-structure diodes. Even though these metals have a similar metal work function of around 5.1 eV, their Schottky barrier heights are considerably different each other. The obtained Schottky barrier heights are 0.96, 1.50 and 1.34 eV for Au, Pd and Ni, respectively. The high Schottky barrier height for Pd is preferable for the gate metal in a field effect transistor and the ohmic metal for p-type nitride semiconductor. Although the work function difference between Au and Pd is just 0.02 eV, the barrier height difference is as high as 0.54 eV, meaning that the interfacial reaction between these metals and GaN or the Fermi-level pinning mechanism is quite different.
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U2 - 10.1002/pssc.200303267
DO - 10.1002/pssc.200303267
M3 - Conference article
AN - SCOPUS:35648975753
SP - 2393
EP - 2395
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1610-1634
IS - 7
T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003
Y2 - 25 May 2003 through 30 May 2003
ER -