Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes

T. Makimoto*, M. Kashiwa, T. Kido, N. Matsumoto, K. Kumakura, N. Kobayashi

*この研究の対応する著者

研究成果査読

4 被引用数 (Scopus)

抄録

We investigated the Schottky characteristics of Au, Pd and Ni on n-GaN using capacitance-voltage and current-voltage measurements for mesa-structure diodes. Even though these metals have a similar metal work function of around 5.1 eV, their Schottky barrier heights are considerably different each other. The obtained Schottky barrier heights are 0.96, 1.50 and 1.34 eV for Au, Pd and Ni, respectively. The high Schottky barrier height for Pd is preferable for the gate metal in a field effect transistor and the ohmic metal for p-type nitride semiconductor. Although the work function difference between Au and Pd is just 0.02 eV, the barrier height difference is as high as 0.54 eV, meaning that the interfacial reaction between these metals and GaN or the Fermi-level pinning mechanism is quite different.

本文言語English
ページ(範囲)2393-2395
ページ数3
ジャーナルPhysica Status Solidi C: Conferences
7
DOI
出版ステータスPublished - 2003
外部発表はい
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
継続期間: 2003 5 252003 5 30

ASJC Scopus subject areas

  • 凝縮系物理学

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