TY - GEN
T1 - SCHOTTKY CHARACTERISTICS AND INTERFACIAL DEFECTS IN TUNGSTEN SILICIDE/GaAs AND PALLADIUM/GaAs SYSTEMS.
AU - Makimoto, T.
AU - Taniguchi, M.
AU - Ogiwara, K.
AU - Ikoma, T.
AU - Okumura, T.
PY - 1984/1/1
Y1 - 1984/1/1
N2 - Schottky characteristics and interfacial defects were investigated in WSi/GaAs and Pd/GaAs systems. In as-deposited WSi/GaAS systems, no EL2 signal was found but a new sputtering-induced defect (ED5) was detected near the interface. After annealing, EL2 appeared and ED5 disappeared. The disappearance of ED5 was correlated with improvement of the ideality factor. In Pd/GaAS systems, change of EL2 density and the broadening of EL2 spectrum is noticeable as compared with the Au/GaAs system. The authors propose a hypothetical model, that reaction of Pd with GaAs may extract excess arsenic atoms near the interface and reduce the concentration of EL2.
AB - Schottky characteristics and interfacial defects were investigated in WSi/GaAs and Pd/GaAs systems. In as-deposited WSi/GaAS systems, no EL2 signal was found but a new sputtering-induced defect (ED5) was detected near the interface. After annealing, EL2 appeared and ED5 disappeared. The disappearance of ED5 was correlated with improvement of the ideality factor. In Pd/GaAS systems, change of EL2 density and the broadening of EL2 spectrum is noticeable as compared with the Au/GaAs system. The authors propose a hypothetical model, that reaction of Pd with GaAs may extract excess arsenic atoms near the interface and reduce the concentration of EL2.
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U2 - 10.7567/ssdm.1984.d-3-2
DO - 10.7567/ssdm.1984.d-3-2
M3 - Conference contribution
AN - SCOPUS:0021597638
SN - 4930813077
SN - 9784930813077
T3 - Conference on Solid State Devices and Materials
SP - 189
EP - 192
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -