TY - JOUR
T1 - Schottky junctions based on vacuum evaporated films of thiophene oligomers
AU - Fichou, D.
AU - Horowitz, G.
AU - Nishikitani, Yoshinori
AU - Roncali, J.
AU - Garnier, F.
PY - 1989/1/30
Y1 - 1989/1/30
N2 - α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.
AB - α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.
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U2 - 10.1016/0379-6779(89)90597-3
DO - 10.1016/0379-6779(89)90597-3
M3 - Article
AN - SCOPUS:0024301384
VL - 28
SP - 729
EP - 734
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 1-2
ER -