Schottky junctions based on vacuum evaporated films of thiophene oligomers

D. Fichou, G. Horowitz, Yoshinori Nishikitani, J. Roncali, F. Garnier

研究成果: Article

41 引用 (Scopus)

抜粋

α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation. Metal-semiconductor (MS) junctions were then realized by evaporating small dots of Ag and Au. On the asformed film, Au gives an ohmic contact, and Ag a rectifying barrier. It is then concluded that α-6T behaves as a p-type semiconductor. After annealing at 150°C, rectifying barriers are obtained on both Au and Ag contacts, and α-6T turns to an n-type semiconductor. Changes in the respective UV-visible absorption may help in understanding the change from p- to n-type doping. A rough estimate of the band position of α-6T was obtained from the current-voltage and capacitance-voltage measurements on the MS diodes.

元の言語English
ページ(範囲)729-734
ページ数6
ジャーナルSynthetic Metals
28
発行部数1-2
DOI
出版物ステータスPublished - 1989 1 30
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

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  • これを引用

    Fichou, D., Horowitz, G., Nishikitani, Y., Roncali, J., & Garnier, F. (1989). Schottky junctions based on vacuum evaporated films of thiophene oligomers. Synthetic Metals, 28(1-2), 729-734. https://doi.org/10.1016/0379-6779(89)90597-3