Secondary defect distribution in high energy ion implanted 4H-SiC

T. Ohno*, Naoto Kobayashi

*この研究の対応する著者

研究成果: Chapter

1 被引用数 (Scopus)

抄録

The distribution of secondary defects in B + or Al + implanted 4H-SiC is examined using TEM and SIMS. They distribute from the projected range for low dosage case and from near surface for high dosage case, and they distribute to the depth at the concentration of about 10% of the maximum dopant concentration. These secondary defects are extrinsic dislocation loops and the distribution of them is closely related to that of excess Si and C interstitials formed by implantation.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
出版社Trans Tech Publ Ltd
338
出版ステータスPublished - 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 1999 10月 101999 10月 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • 材料科学(全般)

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