Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

Makoto Kasu*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

24 被引用数 (Scopus)

抄録

A technique for the selective-area growth of GaAs on a nanometer scale is described. The technique comprises nitrogen (N)-passivation mask formation, scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular-beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules and are modified by STM on a nanometer scale. GaAs nanostructures are then grown on the modified areas using trimethylgallium and tertiarybutylarsine. Uniform 6-nm-high and 50×50-nm2 dots were formed on 50×50-nm2 STM-modified areas. The advantage of the technique is that size-controlled nanostructures can be fabricated in specific positions and these nanostructures are free from contamination because all processes are performed in a vacuum.

本文言語English
ページ(範囲)1161-1163
ページ数3
ジャーナルApplied Physics Letters
70
9
DOI
出版ステータスPublished - 1997 3月 3
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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