Selective growth and contact gap-fill of low resistivity Si via microwave plasma-enhanced CVD

Youngwan Kim, Myoungwoo Lee, Youn Jea Kim*

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Low resistivity polycrystalline Si could be selectively grown in the deep (~200 nm) and narrow patterns (~20 nm) of 20 nm pitch design rule DRAM (Dynamic Random Access Memory) by microwave plasma-enhanced chemical vapor deposition (MW-CVD).We were able to achieve the high phosphorus (CVD gap-fill in a large electrical contact area which does is affected by line pitch size) doping concentration ( > 2.5 × 1021 cm-3) and, thus, a low resistivity by adjusting source gas (SiH4, H2, PH3) decomposition through MW-CVD with a showerhead controlling the decomposition of source gases by using two different gas injection paths. In this study, a selective growth mechanism was applied by using the deposition/etch cyclic process to achieve the bottom-up process in the L-shaped contact, using H2 plasma that simultaneously promoted the deposition and the etch processes. Additionally, the cyclic selective growth technique was set up by controlling the SiH4 flow rate. The bottom-up process resulted in a uniform doping distribution, as well as an excellent filling capacity without seam and center void formation. Thus, low contact resistivity and higher transistor on-current could be achieved at a high and uniform phosphorus (P)-concentration. Compared to the conventional thermal, this method is expected to be a strong candidate for the complicated deep and narrow contact process.

本文言語English
論文番号689
ジャーナルMicromachines
10
10
DOI
出版ステータスPublished - 2019 10月 1
外部発表はい

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 機械工学
  • 電子工学および電気工学

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