Selective growth of carbon nanostructures on nickel implanted nanopyramid array

D. Ferrer*, T. Shinada, T. Tanii, J. Kurosawa, G. Zhong, Y. Kubo, S. Okamoto, H. Kawarada, I. Ohdomari

*この研究の対応する著者

研究成果査読

6 被引用数 (Scopus)

抄録

Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N 2 H 4 H 2 O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH 4 /H 2 ) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.

本文言語English
ページ(範囲)72-77
ページ数6
ジャーナルApplied Surface Science
234
1-4
DOI
出版ステータスPublished - 2004 7 15
イベントThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
継続期間: 2003 9 152003 9 19

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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