Selective growth of ZnTe on sapphire substrates using a SiO2 mask

Taizo Nakasu*, Shota Hattori, Wei Che Sun, Masakazu Kobayashi

*この研究の対応する著者

研究成果: Article査読

抄録

ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

本文言語English
ページ(範囲)2265-2269
ページ数5
ジャーナルPhysica Status Solidi (B) Basic Research
253
11
DOI
出版ステータスPublished - 2016 11 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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