Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition

Jing Sheng Ma, Hiroshi Kawarada, Takao Yonehara, Jun Ichi Suzuki, Jin Wei, Yoshihiro Yokota, Akio Hiraki

研究成果: Article

72 引用 (Scopus)

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Diamond particles have been selectively synthesized on a SiO2 dot-patterned Si substrate using plasma-assisted chemical vapor deposition (plasma CVD). Nucleation densities on both Si and SiO2 have been increased, first by pretreatment using abrasive powders; then, to eliminate the pretreatment effect from almost all of the substrate and to retain the effect only at designed sites, an Ar beam is used to obliquely irradiate the pretreated substrate. After deposition using plasma CVD, diamond particles have selectively formed on one edge of the SiO2 dots according to the pattern and have grown large to adjoin with adjacent particles. Polycrystals with equal grain sizes have been synthesized.

元の言語English
ページ(範囲)1071-1073
ページ数3
ジャーナルApplied Physics Letters
55
発行部数11
DOI
出版物ステータスPublished - 1989 12 1
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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