Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition

Jing Sheng Ma, Hiroshi Kawarada, Takao Yonehara, Jun Ichi Suzuki, Jin Wei, Yoshihiro Yokota, Akio Hiraki

研究成果: Article

72 引用 (Scopus)

抄録

Diamond particles have been selectively synthesized on a SiO2 dot-patterned Si substrate using plasma-assisted chemical vapor deposition (plasma CVD). Nucleation densities on both Si and SiO2 have been increased, first by pretreatment using abrasive powders; then, to eliminate the pretreatment effect from almost all of the substrate and to retain the effect only at designed sites, an Ar beam is used to obliquely irradiate the pretreated substrate. After deposition using plasma CVD, diamond particles have selectively formed on one edge of the SiO2 dots according to the pattern and have grown large to adjoin with adjacent particles. Polycrystals with equal grain sizes have been synthesized.

元の言語English
ページ(範囲)1071-1073
ページ数3
ジャーナルApplied Physics Letters
55
発行部数11
DOI
出版物ステータスPublished - 1989
外部発表Yes

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diamonds
vapor deposition
nucleation
pretreatment
abrasives
polycrystals
grain size

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition. / Ma, Jing Sheng; Kawarada, Hiroshi; Yonehara, Takao; Suzuki, Jun Ichi; Wei, Jin; Yokota, Yoshihiro; Hiraki, Akio.

:: Applied Physics Letters, 巻 55, 番号 11, 1989, p. 1071-1073.

研究成果: Article

Ma, JS, Kawarada, H, Yonehara, T, Suzuki, JI, Wei, J, Yokota, Y & Hiraki, A 1989, 'Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition', Applied Physics Letters, 巻. 55, 番号 11, pp. 1071-1073. https://doi.org/10.1063/1.101708
Ma, Jing Sheng ; Kawarada, Hiroshi ; Yonehara, Takao ; Suzuki, Jun Ichi ; Wei, Jin ; Yokota, Yoshihiro ; Hiraki, Akio. / Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition. :: Applied Physics Letters. 1989 ; 巻 55, 番号 11. pp. 1071-1073.
@article{cca79796248c4f76a7c8ba9fd62eadcf,
title = "Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition",
abstract = "Diamond particles have been selectively synthesized on a SiO2 dot-patterned Si substrate using plasma-assisted chemical vapor deposition (plasma CVD). Nucleation densities on both Si and SiO2 have been increased, first by pretreatment using abrasive powders; then, to eliminate the pretreatment effect from almost all of the substrate and to retain the effect only at designed sites, an Ar beam is used to obliquely irradiate the pretreated substrate. After deposition using plasma CVD, diamond particles have selectively formed on one edge of the SiO2 dots according to the pattern and have grown large to adjoin with adjacent particles. Polycrystals with equal grain sizes have been synthesized.",
author = "Ma, {Jing Sheng} and Hiroshi Kawarada and Takao Yonehara and Suzuki, {Jun Ichi} and Jin Wei and Yoshihiro Yokota and Akio Hiraki",
year = "1989",
doi = "10.1063/1.101708",
language = "English",
volume = "55",
pages = "1071--1073",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition

AU - Ma, Jing Sheng

AU - Kawarada, Hiroshi

AU - Yonehara, Takao

AU - Suzuki, Jun Ichi

AU - Wei, Jin

AU - Yokota, Yoshihiro

AU - Hiraki, Akio

PY - 1989

Y1 - 1989

N2 - Diamond particles have been selectively synthesized on a SiO2 dot-patterned Si substrate using plasma-assisted chemical vapor deposition (plasma CVD). Nucleation densities on both Si and SiO2 have been increased, first by pretreatment using abrasive powders; then, to eliminate the pretreatment effect from almost all of the substrate and to retain the effect only at designed sites, an Ar beam is used to obliquely irradiate the pretreated substrate. After deposition using plasma CVD, diamond particles have selectively formed on one edge of the SiO2 dots according to the pattern and have grown large to adjoin with adjacent particles. Polycrystals with equal grain sizes have been synthesized.

AB - Diamond particles have been selectively synthesized on a SiO2 dot-patterned Si substrate using plasma-assisted chemical vapor deposition (plasma CVD). Nucleation densities on both Si and SiO2 have been increased, first by pretreatment using abrasive powders; then, to eliminate the pretreatment effect from almost all of the substrate and to retain the effect only at designed sites, an Ar beam is used to obliquely irradiate the pretreated substrate. After deposition using plasma CVD, diamond particles have selectively formed on one edge of the SiO2 dots according to the pattern and have grown large to adjoin with adjacent particles. Polycrystals with equal grain sizes have been synthesized.

UR - http://www.scopus.com/inward/record.url?scp=0039584844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039584844&partnerID=8YFLogxK

U2 - 10.1063/1.101708

DO - 10.1063/1.101708

M3 - Article

AN - SCOPUS:0039584844

VL - 55

SP - 1071

EP - 1073

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -