Self-cascode MOSFET with a self-biased body effect for ultra-low-power voltage reference generator

Hao Zhang, Mengshu Huang, Yimeng Zhang, Tsutomu Yoshihara

    研究成果: Article査読

    抄録

    This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-μm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/°C, at a range from -20°C to 80°C. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80°C. The occupied chip area is around 0.028 mm2.

    本文言語English
    ページ(範囲)859-866
    ページ数8
    ジャーナルIEICE Transactions on Electronics
    E96-C
    6
    DOI
    出版ステータスPublished - 2013 6

    ASJC Scopus subject areas

    • 電子工学および電気工学
    • 電子材料、光学材料、および磁性材料

    フィンガープリント

    「Self-cascode MOSFET with a self-biased body effect for ultra-low-power voltage reference generator」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル