Self-limiting laser thermal process for ultra-shallow junction formation of 50-nm gate CMOS

Akio Shima, Hiroshi Ashihara, Toshiyuki Mine, Yasushi Goto, Masatada Horiuchi, Yun Wang, Somit Talwar, Atsushi Hiraiwa

研究成果: Conference contribution

20 被引用数 (Scopus)

抄録

We have developed a novel LTP that dramatically enhances laser exposure window by controlling the heating process in a self-limiting way (SL-LTP). The Vth roll-offs of MOSFETs formed by this method were remarkably improved compared to those by RTA when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate CMOS devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

本文言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
ページ493-496
ページ数4
出版ステータスPublished - 2003
外部発表はい
イベントIEEE International Electron Devices Meeting - Washington, DC, United States
継続期間: 2003 12 82003 12 10

Other

OtherIEEE International Electron Devices Meeting
CountryUnited States
CityWashington, DC
Period03/12/803/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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