抄録
We have developed a novel LTP that dramatically enhances laser exposure window by controlling the heating process in a self-limiting way (SL-LTP). The Vth roll-offs of MOSFETs formed by this method were remarkably improved compared to those by RTA when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate CMOS devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.
本文言語 | English |
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ホスト出版物のタイトル | Technical Digest - International Electron Devices Meeting |
ページ | 493-496 |
ページ数 | 4 |
出版ステータス | Published - 2003 |
外部発表 | はい |
イベント | IEEE International Electron Devices Meeting - Washington, DC, United States 継続期間: 2003 12月 8 → 2003 12月 10 |
Other
Other | IEEE International Electron Devices Meeting |
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国/地域 | United States |
City | Washington, DC |
Period | 03/12/8 → 03/12/10 |
ASJC Scopus subject areas
- 電子工学および電気工学