Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs

Kazuo Kobayashi, Takeshi Nakayama, Masanori Hayashikoshi, Yoshikazu Miyawaki, Yasushi Terada, Hideaki Arima, Takayuki Matsukawa, Tsutomu Yoshihara

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A novel sensing scheme for high-density and high-speed sensing with a sub-10-μA cell current is presented. A source biasing method, which enhances the cell current drivability, and dynamic flip-flop sense amplifiers, in which a reference level is generated on the unselected bit lines with dummy cells, realize the high-speed and low-power operation. The potential of the dummy column is detected to control the sense amplifiers and decoders in a self-timed manner. Simulated results ensure the effectiveness of this sensing scheme for 5-V-only megabit flash E2PROMs (electrically erasable and programmable ROMs).

本文言語English
ホスト出版物のタイトルSymp VLSI Circuit 1989
編集者 Anon
Place of PublicationPiscataway, NJ, United States
出版社Publ by IEEE
ページ39-40
ページ数2
出版ステータスPublished - 1989
外部発表はい
イベントSymposium on VLSI Circuits 1989 - Kyoto, Japan
継続期間: 1989 5 251989 5 27

Other

OtherSymposium on VLSI Circuits 1989
CityKyoto, Japan
Period89/5/2589/5/27

ASJC Scopus subject areas

  • 工学(全般)

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