Semiconducting conjugated oligomers for molecular electronics

D. Fichou, G. Horowitz, Yoshinori Nishikitani, F. Garnier

研究成果: Article

37 引用 (Scopus)

抜粋

Oligomers of thiophene α-5T and α-6T were synthesized and vacuum evaporated as thin solid films onto platinized glass slides. They all behave as p-type semiconductors, and good rectifying barriers were obtained at α-nT/Ag junctions. Current-voltage and capacitance-voltage measurements were made, and allowed to determine electronic parameters of the organic semiconductors, such as mobility and doping level. Their values are compared to those of a polymethylthiophene (PMeT)/Ag diode. It appears that, due to their lower concentration of structural defects, well-defined oligomers present some advantages over polymers as far as their utilization to molecular electronics is concerned.

元の言語English
ページ(範囲)723-727
ページ数5
ジャーナルSynthetic Metals
28
発行部数1-2
DOI
出版物ステータスPublished - 1989 1 30
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

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  • これを引用

    Fichou, D., Horowitz, G., Nishikitani, Y., & Garnier, F. (1989). Semiconducting conjugated oligomers for molecular electronics. Synthetic Metals, 28(1-2), 723-727. https://doi.org/10.1016/0379-6779(89)90596-1