Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch

Takeo Ohno, Tsuyoshi Hasegawa, Alpana Nayak, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

研究成果: Article査読

53 被引用数 (Scopus)

抄録

Memorization caused by the change in conductance in a Ag2S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (Vin). The conductance changed little for the first few Vin, but the information of the input was stored as a redistribution of Ag-ions in the Ag2S, indicating the formation of sensory memory. After a certain number of Vin, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of Vin, which resembles the learning behavior of the human brain.

本文言語English
論文番号203108
ジャーナルApplied Physics Letters
99
20
DOI
出版ステータスPublished - 2011 11 14
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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