抄録
Nitrogen atomic-layer-doping (N-ALD) shows a series of strong photoluminescence (PL) lines, while uniformly N-doped GaAs shows relatively weak (PL) lines related to N atoms. It was observed that the dominant PL line at 1.4437 eV, where an exciton bound to the N isotropic traps has the highest binding energy. The N-atom distance affects the PL spectra in a different way for the N-ALD and uniformly N-doped GaAs. This might be due to the difference in the doping mechanism between the ALD and the uniform doping methods.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 688-690 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 67 |
| 発行部数 | 5 |
| DOI | |
| 出版物ステータス | Published - 1995 1 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs. / Makimoto, Toshiki; Kobayashi, Naoki.
：: Applied Physics Letters, 巻 67, 番号 5, 01.01.1995, p. 688-690.研究成果: Article
}
TY - JOUR
T1 - Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 1995/1/1
Y1 - 1995/1/1
N2 - Nitrogen atomic-layer-doping (N-ALD) shows a series of strong photoluminescence (PL) lines, while uniformly N-doped GaAs shows relatively weak (PL) lines related to N atoms. It was observed that the dominant PL line at 1.4437 eV, where an exciton bound to the N isotropic traps has the highest binding energy. The N-atom distance affects the PL spectra in a different way for the N-ALD and uniformly N-doped GaAs. This might be due to the difference in the doping mechanism between the ALD and the uniform doping methods.
AB - Nitrogen atomic-layer-doping (N-ALD) shows a series of strong photoluminescence (PL) lines, while uniformly N-doped GaAs shows relatively weak (PL) lines related to N atoms. It was observed that the dominant PL line at 1.4437 eV, where an exciton bound to the N isotropic traps has the highest binding energy. The N-atom distance affects the PL spectra in a different way for the N-ALD and uniformly N-doped GaAs. This might be due to the difference in the doping mechanism between the ALD and the uniform doping methods.
UR - http://www.scopus.com/inward/record.url?scp=0029346556&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029346556&partnerID=8YFLogxK
U2 - 10.1063/1.115204
DO - 10.1063/1.115204
M3 - Article
AN - SCOPUS:0029346556
VL - 67
SP - 688
EP - 690
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
ER -