抄録
We performed nitrogen atomic-layer doping into GaAs grown by molecular beam epitaxy using nitrogen molecules (N2) cracked by a hot tungsten filament. While uniformly nitrogen-doped GaAs layers show relatively weak nitrogen-related photoluminescence lines, nitrogen atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines. The dominant photoluminescence line was observed at 1.4437 eV, where an exciton bound to the nitrogen isotropic traps has the highest binding energy.
本文言語 | English |
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ページ(範囲) | 688 |
ページ数 | 1 |
ジャーナル | Applied Physics Letters |
巻 | 67 |
DOI | |
出版ステータス | Published - 1995 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)