Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.

    本文言語English
    ホスト出版物のタイトル2015 IEEE International Ultrasonics Symposium, IUS 2015
    出版社Institute of Electrical and Electronics Engineers Inc.
    ISBN(印刷版)9781479981823
    DOI
    出版ステータスPublished - 2015 11月 13
    イベントIEEE International Ultrasonics Symposium, IUS 2015 - Taipei, Taiwan, Province of China
    継続期間: 2015 10月 212015 10月 24

    Other

    OtherIEEE International Ultrasonics Symposium, IUS 2015
    国/地域Taiwan, Province of China
    CityTaipei
    Period15/10/2115/10/24

    ASJC Scopus subject areas

    • 音響学および超音波学

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