Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    研究成果: Conference contribution

    1 引用 (Scopus)

    抄録

    Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.

    元の言語English
    ホスト出版物のタイトル2015 IEEE International Ultrasonics Symposium, IUS 2015
    出版者Institute of Electrical and Electronics Engineers Inc.
    ISBN(印刷物)9781479981823
    DOI
    出版物ステータスPublished - 2015 11 13
    イベントIEEE International Ultrasonics Symposium, IUS 2015 - Taipei, Taiwan, Province of China
    継続期間: 2015 10 212015 10 24

    Other

    OtherIEEE International Ultrasonics Symposium, IUS 2015
    Taiwan, Province of China
    Taipei
    期間15/10/2115/10/24

    Fingerprint

    sputtering
    shear
    acoustics
    piezoelectricity
    S waves
    magnetron sputtering
    resonators
    harmonics
    diffraction
    x rays

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    これを引用

    Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2015). Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering. : 2015 IEEE International Ultrasonics Symposium, IUS 2015 [7329631] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULTSYM.2015.0537

    Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering. / Takayanagi, Shinji; Matsukawa, Mami; Yanagitani, Takahiko.

    2015 IEEE International Ultrasonics Symposium, IUS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7329631.

    研究成果: Conference contribution

    Takayanagi, S, Matsukawa, M & Yanagitani, T 2015, Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering. : 2015 IEEE International Ultrasonics Symposium, IUS 2015., 7329631, Institute of Electrical and Electronics Engineers Inc., IEEE International Ultrasonics Symposium, IUS 2015, Taipei, Taiwan, Province of China, 15/10/21. https://doi.org/10.1109/ULTSYM.2015.0537
    Takayanagi S, Matsukawa M, Yanagitani T. Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering. : 2015 IEEE International Ultrasonics Symposium, IUS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7329631 https://doi.org/10.1109/ULTSYM.2015.0537
    Takayanagi, Shinji ; Matsukawa, Mami ; Yanagitani, Takahiko. / Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering. 2015 IEEE International Ultrasonics Symposium, IUS 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
    @inproceedings{9f1f6a7c73be4c07beea1158ee754d02,
    title = "Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering",
    abstract = "Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.",
    keywords = "AlN, c-axis parallel orientation, RF bias sputtering, ScAlN, Shear wave",
    author = "Shinji Takayanagi and Mami Matsukawa and Takahiko Yanagitani",
    year = "2015",
    month = "11",
    day = "13",
    doi = "10.1109/ULTSYM.2015.0537",
    language = "English",
    isbn = "9781479981823",
    booktitle = "2015 IEEE International Ultrasonics Symposium, IUS 2015",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",

    }

    TY - GEN

    T1 - Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering

    AU - Takayanagi, Shinji

    AU - Matsukawa, Mami

    AU - Yanagitani, Takahiko

    PY - 2015/11/13

    Y1 - 2015/11/13

    N2 - Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.

    AB - Because the increase of piezoelectricity was found in Sc heavily doped AlN films, they have been well studied. Many researchers investigate the properties of the longitudinal mode bulk acoustic wave with c-axis normally oriented ScAlN films. However, there are few reports on the shear mode properties because of difficulties in growth of c-axis parallel oriented ScAlN films which can excite shear mode bulk acoustic wave. In this study, we demonstrated the film growth of c-axis parallel oriented ScAlN using RF substrate bias RF magnetron sputtering method. As a result of X-ray diffraction analyses, we obtained c-axis parallel oriented AlN, Sc0.05Al0.95N and Sc0.13Al0.87N films. Then, High overtone bulk acoustic wave resonators were fabricated with these films. They excited shear mode bulk acoustic wave, but shear mode conversion losses were large (more than 20 dB). It is necessary to obtain highly-crystallized ScAlN films.

    KW - AlN

    KW - c-axis parallel orientation

    KW - RF bias sputtering

    KW - ScAlN

    KW - Shear wave

    UR - http://www.scopus.com/inward/record.url?scp=84962030314&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84962030314&partnerID=8YFLogxK

    U2 - 10.1109/ULTSYM.2015.0537

    DO - 10.1109/ULTSYM.2015.0537

    M3 - Conference contribution

    AN - SCOPUS:84962030314

    SN - 9781479981823

    BT - 2015 IEEE International Ultrasonics Symposium, IUS 2015

    PB - Institute of Electrical and Electronics Engineers Inc.

    ER -