Shift-aligned GSG transitions through a silicon wafer

Tamotsu Nishino*, Yoshio Fujii, Hiroshi Fukumoto, Yukihisa Yoshida, Moriyasu Miyazaki, Tadashi Takagi

*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

本文言語English
ホスト出版物のタイトル35th European Microwave Conference 2005 - Conference Proceedings
ページ173-175
ページ数3
DOI
出版ステータスPublished - 2005
外部発表はい
イベント2005 European Microwave Conference - Paris, France
継続期間: 2005 10月 42005 10月 6

出版物シリーズ

名前35th European Microwave Conference 2005 - Conference Proceedings
1

Conference

Conference2005 European Microwave Conference
国/地域France
CityParis
Period05/10/405/10/6

ASJC Scopus subject areas

  • 工学(全般)

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