The Si doping mechanism is systematically investigated in dilute nitride GaAsN grown by radio frequency plasma assisted molecular beam epitaxy (RF-MBE). We change growth temperature, Si impurity concentration ([Si]), and nitrogen composition ([N]). The relationship between Si activation ratio (α) and [N] are evaluated using X-ray diffraction (XRD) 2θ-ω and Hall effect measurement. As [N] in GaAsN increases, α drastically decreases, which is ascribed to mechanisms of inactive Si donors such as a cluster of Si and N at an As site ((Si-N) As ). We find that the main factor of inactive Si donors in GaAsN depends on both [Si] and [N].
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