Si doping mechanism in Si doped GaAsN

T. Tsukasaki*, R. Hiyoshi, M. Fujita, T. Makimoto

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The Si doping mechanism is systematically investigated in dilute nitride GaAsN grown by radio frequency plasma assisted molecular beam epitaxy (RF-MBE). We change growth temperature, Si impurity concentration ([Si]), and nitrogen composition ([N]). The relationship between Si activation ratio (α) and [N] are evaluated using X-ray diffraction (XRD) 2θ-ω and Hall effect measurement. As [N] in GaAsN increases, α drastically decreases, which is ascribed to mechanisms of inactive Si donors such as a cluster of Si and N at an As site ((Si-N) As ). We find that the main factor of inactive Si donors in GaAsN depends on both [Si] and [N].

本文言語English
ページ(範囲)45-48
ページ数4
ジャーナルJournal of Crystal Growth
514
DOI
出版ステータスPublished - 2019 5 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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